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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3716
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3716 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3716 2SK3716-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z)
FEATURES
* Super low on-state resistance: RDS(on)1 = 6.5 m MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.1 m MAX. (VGS = 4.5 V, ID = 30 A) * Low Ciss: Ciss = 2700 pF TYP. * Built-in gate protection diode (TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. 2.
Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS
40 20 60 240 84 1.0 150 -55 to +150
32 100
V V A A W W C C A mJ
(TO-252)
PW 10 s, Duty Cycle 1% VDD = 20 V, RG = 25 , VGS = 20 0 V, Tch(peak) 150C
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D16538EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2003
2SK3716
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2
TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A VGS = 4.5 V, ID = 30 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 20 V, ID = 30 A VGS = 10 V RG = 0
MIN.
TYP.
MAX. 10 10
UNIT
A A
V S
1.5 22
2.0 43 5.2 6.6 2700 770 290 11 13 69 14
2.5
Drain to Source On-state Resistance
6.5 9.1
m m pF pF pF ns ns ns ns nC nC nC
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
VDD = 32 V VGS = 10 V ID = 60 A IF = 60 A, VGS = 0 V IF = 60 A, VGS = 0 V di/dt = 100 A/s
50 9 13 0.94 40 42 1.5
V ns nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
RL VDD
VGS VGS
Wave Form
0
10%
VGS
90%
VDS
90% 90% 10% 10%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS VDS
Wave Form
0
td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16538EJ2V0DS
2SK3716
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % PT - Total Power Dissipation - W
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 ID(DC) = 60 A
ID - Drain Current - A
ID(pulse) = 240 A
100 DC RDS(on) Limited (at VGS = 10 V) PW = 100 s 1 ms Single Pulse 10 ms TC = 25C 0.1 1 10 100
10
1
0.1
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - C/W
1000 Channel to Ambient Rth(ch-A) = 125C/W 100 10 1 0.1 0.01 0.001
100 1m 10 m 100 m 1 10 PW - Pulse Width - s
Channel to Case Rth(ch-C) = 1.49C/W
Single Pulse
100 1000
Data Sheet D16538EJ2V0DS
3
2SK3716
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
300 Pulsed 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 VGS = 10 V 4.5 V 4.0 V
FORWARD TRANSFER CHARACTERISTICS
1000 100 10 1 0.1 0.01 0.001 0 1 2 3 TA = 150C 75C 25C -55C
ID - Drain Current - A
ID - Drain Current - A
VDS = 10 V Pulsed 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 mA
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 VDS = 10 V Pulsed
2.5 2 1.5 1 0.5 0 -100
TA = 150C 75C 25C 10 -55C
-50
0
50
100
150
200
1 0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
20 18 16 14 12 10 8 6 4 2 0 1
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
Pulsed VGS = 4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 ID = 60 A 30 A 12 A Pulsed
4.5 V 10 V
10
100
1000
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16538EJ2V0DS
2SK3716
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
16 14 12 10 8 6 4 2 0 -100 ID = 30 A Pulsed VGS = 4 V 4.5 V 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
RDS(on) - Drain to Source On-state Resistance - m
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz Ciss
1000 Coss
Crss 100
-50 0 50 100 150 200
0.1
1
10
100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V
45 40 35 30 25 20 15 10 5 0 0 10 VDS ID = 60 A Pulsed 30 40 50 VGS VDD = 32 V 20 V 8V 9 8 7 6 5 4 3 2 1 0 20
100 tf
td(off)
tr 10 td(on)
1 0.1 1 10 100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 100 VGS = 10 V 100 4.5 V 10 0V 1 0.1 0.01 0 0.5 1 Pulsed 1.5
REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT
di/dt = 100 A/s VGS = 0 V
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
10 0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
Data Sheet D16538EJ2V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 20 V VGS = 10 V RG = 0
50
10
2SK3716
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.5 -0.1
+0.2
5.0 0.2
1.6 0.2
0.5 0.1
0.8 4.3 MAX.
4
5.5 0.2 13.7 MIN.
6.5 0.2 5.0 0.2 4
1.5 -0.1
+0.2
6.5 0.2
2.3 0.2
2.3 0.2 0.5 0.1
1
2
3
7.0 MIN.
1
2
3
1.1 0.2
+0.2
0.5 -0.1
2.3 2.3
0.75
0.5 -0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
+0.2
0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
6
Data Sheet D16538EJ2V0DS
0.7
1.1 0.2
2.0 MIN.
5.5 0.2 10.0 MAX.
1.0 MIN. 1.8TYP.
2SK3716
* The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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